Hot Oje electronic leak device simulator
Analysis tool for leakage caused by Auger recombination in quantum wells.
APSYS can provide various models related to the efficiency degradation of LEDs. (Potential strain in quantum wells and barriers due to polarization charge. Cold carrier leakage across quantum barriers and electron blocking layers. Non-local transport due to hot carriers. Non-local hot Auger electron leakage via thermionic emission (Auger-thermionic model). Non-local direct escape from quantum wells dependent on Auger recombination rate (Auger-direct model). Hot carrier non-local emission from quantum barriers dependent on Auger recombination rate (Auger-indirect model).)
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
